View FDG313N_308797.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FDG313N
July 2000
FDG313N
Digital FET, N-Channel
General Description
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.
Features *
0.95 A, 25 V. RDS(on) = 0.45 @ VGS = 4.5 V RDS(on) = 0.60 @ VGS = 2.7 V.
* * * *
Low gate charge (1.64 nC typical) Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). Compact industry standard SC70-6 surface mount package.
Applications * Load switch * Battery protection * Power management
D D
S
1 6
2
5
pin 1
SC70-6
D
D
G
3 4
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25C unless otherwise noted
Parameter
FDG313N
25
(Note 1a)
Units
V V A W
8 0.95 2 0.75 0.55 0.48 -55 to +150 6
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, Tstg ESD
Operating and Storage Junction Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm)
C kV
Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient
(Note 1c)
260
C/W
Package Outlines and Ordering Information
Device Marking .13
1998 Fairchild Semiconductor Corporation
Device
FDG313N
Reel Size
7''
Tape Width
8mm
Quantity
3000 units
FDG313N Rev. C
FDG313N
DMOS Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 20 V, VGS = 0 V VGS = 8 V, VDS = 0 V
Min
25
Typ
Max Units
V
Off Characteristics
30 1 100 mV/C A nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 0.5 A VGS = 4.5 V, ID = 0.5 A @ 125C VGS = 2.7 V, ID = 0.2 A VGS = 4.5 V, VDS = 5 V VDS = 5 V, ID = 0.5 A
0.65
0.8 -2 0.35 0.53 0.45
1.5
V mV/C
0.45 0.76 0.6
ID(on) gFS
0.5 1.5
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 10 V, VGS = 0 V, f = 1.0 MHz
50 28 9
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50
3 8.5 17 13
6 18 30 25 2.3
ns ns ns ns nC nC nC
VDS = 5 V, ID = 0.95 A, VGS = 4.5 V
1.64 0.38 0.45
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.6 A
(Note 2)
0.6 0.8 1.2
A V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design.
a) 170C/W when mounted on a 1 in2 pad of 2oz copper.
b) 225C/W when mounted on a half of package sized 2oz. copper.
c) 260C/W when mounted on a minimum pad of 2oz copper.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
FDG313N Rev. C
FDG313N
Typical Characteristics
2 I D , DRAIN-SOURCE CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
VGS = 4.5V
2.5
3.0V 2.5V
R DS(ON) , NORMALIZED
1.5
2
VGS = 2.0V 2.5V 3.0V 3.5V 4.0V
2.0V
1
1.5
0.5
1
4.5V
1.5V
0.5
0
0
0.5
1 I D , DRAIN CURRENT (A)
1.5
2
0
1
2
3
4
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.6
R D S(ON) , ON-RESISTANCE (OHM)
1.6 DRAIN-SOURCE ON-RESISTANCE
I D = 0.95 A VGS = 4.5 V
I D = 0.5A
1.2
R DS(ON) , NORMALIZED
1.4
1.2
0.8
1
TA = 1 25C
0.4
0.8
TA= 25C
0
0.6 -50
-25
0
25
50
75
100
125
150
1
2
3
4
5
TJ , JUNCTION TEMPERATURE (C)
V GS , GATE TO SOUR CE VOLT AGE (V)
Figure 3. On-Resistance Variation with Temperature.
1
I S , REVERSE DRAIN CURRENT (A) 1
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
V GS = 0V TJ = 125C
0.1
V DS = 5.0V
I D , DRAIN CURRENT (A) 0.8
T = -55C J
25C 125C
25C
0.01
0.6
-55C
0.4
0.001
0.2
0 0 0.5 1 1.5 2 2.5 V GS, GATE TO SOURCE VOLTAGE (V)
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDG313N Rev. C
FDG313N
Typical Characteristics
5 V GS , GATE-SOURCE VOLTAGE (V)
(continued)
150
I D = 0.95A
4
VDS = 5V
100
10V
15V
3
CAPACITANCE (pF)
50
Ciss Coss
2
20
1
10
f = 1 MHz V GS = 0V
C rss
0 0 0.4 0.8 1.2 1.6 2 Q g , GATE CHARGE (nC)
5 0.1 V
DS
0.5
1
2
5
10
25
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
5 2 I D , DRAIN CURRENT (A) 1
) ON S( RD IT LIM
30 SINGLE PULSE
1m s
10m 100 1s 10s DC ms s
POWER (W)
24
RJA= 260 C/W TA= 25 C
o
o
18
0.3 0.1
12
0.03 0.01 0.1
VGS = 4.5V SINGLE PULSE RJA =260C/W TA = 25C
0.2 0.5 1 2 5
6
0
10
20 30
50
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1 TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5
D = 0.5 0.2
R JA (t) = r(t) * R JA R JA =260C/W
P(pk)
0.1 0.05
0.1 0.05 0.01 0.02 Single Pulse
t1
t2
TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2
0.01 0.005 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design.
FDG313N Rev. C
SC70-6 Tape and Reel Data and Package Dimensions
SC70-6 Packaging Configuration: Figure 1.0
Customized Label
Packaging Description:
SC70-6 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 177cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 10,000 units per 13" or 330cm diameter reel. This and some other options are described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a pizza box (illustrated in figure 1.0) made of recyclable corrugated brown paper with a Fairchild logo printing. One pizza box contains three reels maximum. And these pizza boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped.
Antistatic Cover Tape
F63TNR Static Dissipative Label Embossed Carrier Tape
21 21
SC70-6 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no flow code) TNR 3,000 7" Dia 184x187x47 9,000 0.0055 0.1140 D87Z TNR 10,000 13" 343x343x64 30,000 0.0055 0.3960
21
21
21
Pin 1
SC70-6 Unit Orientation
343mm x 342mm x 64mm Intermediate box for D87Z Option
F63TNR Barcode Label
F63TNR Label
F63TNR Label sample 184mm x 187mm x 47mm Pizza Box for Standard Option F63TNR Label
LOT: CBVK741B019 FSID: FDG6302P QTY: 3000 SPEC:
D/C1: D9842 D/C2:
QTY1: QTY2:
SPEC REV: CPN: N/F: F
(F63TNR)3
SC70-6 Tape Leader and Trailer Configuration: Figure 2.0
Carrier Tape Cover Tape
Components Trailer Tape 300mm minimum or 75 empty pockets Leader Tape 500mm minimum or 125 empty pockets
August 1999, Rev. C
SC70-6 Tape and Reel Data and Package Dimensions, continued
SC70-6 Embossed Carrier Tape Configuration: Figure 3.0
T E1
P0
D0
F K0 Wc B0 E2 W
Tc A0 P1 D1
User Direction of Feed
Dimensions are in millimeter Pkg type SC70-6 (8mm)
A0
2.24 +/-0.10
B0
2.34 +/-0.10
W
8.0 +/-0.3
D0
1.55 +/-0.05
D1
1.125 +/-0.125
E1
1.75 +/-0.10
E2
6.25 min
F
3.50 +/-0.05
P1
4.0 +/-0.1
P0
4.0 +/-0.1
K0
1.20 +/-0.10
T
0.255 +/-0.150
Wc
5.2 +/-0.3
Tc
0.06 +/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum Typical component cavity center line
0.5mm maximum
B0 20 deg maximum component rotation
0.5mm maximum
Sketch A (Side or Front Sectional View)
Component Rotation
A0 Sketch B (Top View)
Typical component center line
Sketch C (Top View)
Component lateral movement
SC70-6 Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A Max
Dim A max
Dim N
See detail AA
7" Diameter Option
B Min Dim C See detail AA W3
Dim D min
13" Diameter Option
W2 max Measured at Hub DETAIL AA
Dimensions are in inches and millimeters
Tape Size
8mm
Reel Option
7" Dia
Dim A
7.00 177.8 13.00 330
Dim B
0.059 1.5 0.059 1.5
Dim C
0.512 +0.020/-0.008 13 +0.5/-0.2 0.512 +0.020/-0.008 13 +0.5/-0.2
Dim D
0.795 20.2 0.795 20.2
Dim N
2.165 55 4.00 100
Dim W1
0.331 +0.059/-0.000 8.4 +1.5/0 0.331 +0.059/-0.000 8.4 +1.5/0
Dim W2
0.567 14.4 0.567 14.4
Dim W3 (LSL-USL)
0.311 - 0.429 7.9 - 10.9 0.311 - 0.429 7.9 - 10.9
8mm
13" Dia
July 1999, Rev. C
SC70-6 Tape and Reel Data and Package Dimensions, continued
SC70-6 (FS PKG Code 76)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in: inches [millimeters]
Part Weight per unit (gram): 0.0055
March 2000, Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R)
DISCLAIMER
FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM POPTM PowerTrench(R)
QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM
VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. F1

▲Up To Search▲

Price & Availability of FDG313N

	To Download FDG313N Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .